| 2000.03 |
founded |
| 2000.03 |
designated as an Excellent Venture Company from the Small and Medium Company Promotion Association in Korea |
| 2000.03 |
developed an Ion-Doping System for n+ contact for poly-Si TFT process |
| 2000.12 |
registered as a Silicon Display Cooperation in Korean Government |
| 2001.01 |
developed PECVD equipment for the growth of CNTs |
| 2002.01 |
developed the a-Si:H TFT array fabrication process at a temperature of 150C. |
| 2002.12 |
designated as a super-high technology company from Korea Small and Medium Company Bank in Korea |
| 2003.06 |
developed PECVD, Sputtering, Reactive ion etching, Ion doping systems (6" by 6" substrate) |
| 2003.07 |
establish a R&D Center |
| 2003.08 |
developed a high-resolution image sensors |
History
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